Infineon IRF9952TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF9952TRPBF

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Specifications

Current - Continuous Drain(Id)3.5A;2.3A
RDS(on)100mΩ@10V
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)190pF
Gate Charge(Qg)14nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 30V 3.5A 2.3A Surface Mount SO-8

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