Infineon IRF9952QPBF

Infineon · FETs & Power MOSFETs · MPN IRF9952QPBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)14nC@10V
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)61pF
RDS(on)250mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)190pF
TypeN-Channel + P-Channel

Technical details

30V 3.5A 1V 1.3W 250mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SO-8 Single FETs, MOSFETs RoHS

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