Infineon IRF9530NPBF

Infineon · FETs & Power MOSFETs · MPN IRF9530NPBF

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Specifications

Gate Charge(Qg)58nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)200mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)760pF
TypeP-Channel

Technical details

P-Channel 100V 14A 79W Through Hole TO-220AB

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