Infineon IRF9335TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF9335TRPBF

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Specifications

Gate Charge(Qg)9.1nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)5.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)59mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)386pF

Technical details

P-Channel 30V 5.4A 2.5W Surface Mount SO-8

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