Infineon IRF9335PBF

Infineon · FETs & Power MOSFETs · MPN IRF9335PBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)14nC@10V
Current - Continuous Drain(Id)5.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)110mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)386pF
TypeP-Channel

Technical details

30V 5.4A 2.4V 2.5W 110mΩ@4.5V 1 P-Channel P-Channel SO-8 Single FETs, MOSFETs RoHS

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