Infineon IRF9230

Infineon · FETs & Power MOSFETs · MPN IRF9230

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Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
RDS(on)920mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)700pF
TypeP-Channel

Technical details

200V 6.5A 4V 75W 920mΩ@10V 1 P-Channel P-Channel TO-204AA(TO-3) Single FETs, MOSFETs RoHS

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