Infineon IRF8915PBF

Infineon · FETs & Power MOSFETs · MPN IRF8915PBF

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)7.4nC@4.5V
Current - Continuous Drain(Id)8.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)91pF
RDS(on)18.3mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)540pF

Technical details

20V 8.9A 2.5V 2W 18.3mΩ@10V 2 N-Channel SO-8 Single FETs, MOSFETs RoHS

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