Infineon IRF8788PBF

Infineon · FETs & Power MOSFETs · MPN IRF8788PBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)66nC@4.5V
Output Capacitance(Coss)980pF
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)450pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.72nF
TypeN-Channel

Technical details

30V 24A 2.35V 2.5W 2.8mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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