Infineon IRF8714PBF

Infineon · FETs & Power MOSFETs · MPN IRF8714PBF

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Specifications

Gate Charge(Qg)12nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)220pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)13mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.02nF
TypeN-Channel

Technical details

30V 14A 2.35V 2.5W 13mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS

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