Infineon IRF8327STRPBF

Infineon · FETs & Power MOSFETs · MPN IRF8327STRPBF

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Specifications

Configuration-
Gate Charge(Qg)9.2nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)14A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)8.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.43nF

Technical details

30V 14A 1.9V 2.2W 8.5mΩ@4.5V 1 N-channel DirectFET Single FETs, MOSFETs RoHS

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