Infineon IRF8313TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF8313TRPBF

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Specifications

Gate Charge(Qg)6nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)9.7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)87pF
RDS(on)15.5mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)760pF

Technical details

N-Channel Array 30V 9.7A 2W Surface Mount SO-8

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