Infineon IRF830PBF

Infineon · FETs & Power MOSFETs · MPN IRF830PBF

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Specifications

Gate Charge(Qg)38nC
Drain to Source Voltage500V
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)1.5Ω@10V
Input Capacitance(Ciss)610pF

Technical details

500V 4.5A 74W Through Hole TO-220AB

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