Infineon IRF8302MTRPBF

Infineon · FETs & Power MOSFETs · MPN IRF8302MTRPBF

No reviews yet — be the first to review Infineon IRF8302MTRPBF.

Specifications

Gate Charge(Qg)53nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)1.36nF
Current - Continuous Drain(Id)31A;190A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation2.8W;104W
Reverse Transfer Capacitance (Crss@Vds)560pF
RDS(on)1.4mΩ@10V;2.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)6.03nF

Technical details

N-Channel 30V 31A 190A 2.8W 104W Surface Mount MG-WDSON-5

Related FETs & Power MOSFETs