Infineon IRF8252PBF

Infineon · FETs & Power MOSFETs · MPN IRF8252PBF

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)53nC@4.5V
Output Capacitance(Coss)1.34nF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)725pF
RDS(on)2.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.305nF
TypeN-Channel

Technical details

25V 25A 2.35V 2.5W 2.7mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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