Infineon IRF820PBF

Infineon · FETs & Power MOSFETs · MPN IRF820PBF

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Specifications

Gate Charge(Qg)24nC
Drain to Source Voltage500V
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)360pF
TypeN-Channel

Technical details

500V 2.5A 4V 50W 3Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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