Infineon IRF8010STRLPBF

Infineon · FETs & Power MOSFETs · MPN IRF8010STRLPBF

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Specifications

Gate Charge(Qg)120nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation260W
Reverse Transfer Capacitance (Crss@Vds)59pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.83nF

Technical details

N-Channel 100V 80A 260W Surface Mount D2PAK

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