Infineon · FETs & Power MOSFETs · MPN IRF8010PBF
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| Gate Charge(Qg) | 120nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 260W |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.83nF |
N-Channel 100V 80A 260W Through Hole ITO-220AB-3