Infineon IRF7853TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7853TRPBF

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Specifications

Gate Charge(Qg)39nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.6nF
Current - Continuous Drain(Id)8.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.9V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)71pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.64nF
Type-

Technical details

N-Channel 100V 8.3A 2.5W Surface Mount SO-8

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