Infineon IRF7842TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7842TRPBF

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Specifications

Gate Charge(Qg)33nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.25V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.5nF

Technical details

N-Channel 40V 18A 2.5W Surface Mount SO-8

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