Infineon IRF7842PBF

Infineon · FETs & Power MOSFETs · MPN IRF7842PBF

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)33nC@4.5V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.25V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)5.9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.5nF
TypeN-Channel

Technical details

40V 18A 2.25V 2.5W 5.9mΩ@4.5V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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