Infineon IRF7834TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7834TRPBF

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Specifications

Gate Charge(Qg)44nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)810pF
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.25V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)350pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.71nF
TypeN-Channel

Technical details

30V 19A 2.25V 2.5W 4.5mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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