Infineon IRF7832TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7832TRPBF

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Specifications

Gate Charge(Qg)51nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+155℃
Gate Threshold Voltage (Vgs(th))2.32V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)450pF
RDS(on)4.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.31nF
TypeN-Channel

Technical details

N-Channel 30V 20A 2.5W Surface Mount SO-8

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