Infineon IRF7832PBF

Infineon · FETs & Power MOSFETs · MPN IRF7832PBF

No reviews yet — be the first to review Infineon IRF7832PBF.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)34nC@4.5V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+155℃
Gate Threshold Voltage (Vgs(th))2.32V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)450pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.31nF
TypeN-Channel

Technical details

30V 20A 2.32V 2.5W 4mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs