Infineon IRF7820TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7820TRPBF

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Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)3.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)78mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.75nF

Technical details

200V 3.7A 4V 2.5W 78mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS

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