Infineon IRF7807ZPBF

Infineon · FETs & Power MOSFETs · MPN IRF7807ZPBF

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Specifications

Gate Charge(Qg)11nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)190pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.25V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)13.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)770pF
TypeN-Channel

Technical details

30V 11A 2.25V 2.5W 13.8mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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