Infineon IRF7807VPBF

Infineon · FETs & Power MOSFETs · MPN IRF7807VPBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)9.5nC@5V
Current - Continuous Drain(Id)8.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
RDS(on)25mΩ@4.5V
Number1 N-channel
TypeN-Channel

Technical details

30V 8.3A 3V 2.5W 25mΩ@4.5V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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