Infineon IRF7779L2TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7779L2TRPBF

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Specifications

Gate Charge(Qg)97nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)67A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.66nF

Technical details

N-Channel 150V 67A 125W Surface Mount MG-WDSON-11

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