Infineon · FETs & Power MOSFETs · MPN IRF7769L1TRPBF
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| Gate Charge(Qg) | 300nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 20A;124A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.3W;125W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.56nF |
100V 4V 3.5mΩ@10V 1 N-channel MG-WDSON-11 Single FETs, MOSFETs RoHS