Infineon IRF7769L1TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7769L1TRPBF

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Specifications

Gate Charge(Qg)300nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)20A;124A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.3W;125W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.56nF

Technical details

100V 4V 3.5mΩ@10V 1 N-channel MG-WDSON-11 Single FETs, MOSFETs RoHS

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