Infineon IRF7606TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7606TRPBF

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Specifications

Gate Charge(Qg)30nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)3.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)90mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)520pF
TypeP-Channel

Technical details

P-Channel 30V 3.6A 1.8W Surface Mount Micro-8

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