Infineon IRF7601PBF

Infineon · FETs & Power MOSFETs · MPN IRF7601PBF

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Specifications

Gate Charge(Qg)22nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)5.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)50mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)650pF
TypeN-Channel

Technical details

20V 5.7A 700mV 1.8W 50mΩ@4.5V 1 N-channel N-Channel TSSOP-8-3mm Single FETs, MOSFETs RoHS

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