Infineon IRF7476TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7476TRPBF

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Specifications

Gate Charge(Qg)40nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)2.19nF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)450pF
RDS(on)30mΩ@2.8V
Number1 N-channel
Input Capacitance(Ciss)2.55nF
Type-

Technical details

12V 15A 1.9V 2.5W 30mΩ@2.8V 1 N-channel SO-8 Single FETs, MOSFETs RoHS

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