Infineon IRF7473TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7473TRPBF

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Specifications

Configuration-
Gate Charge(Qg)61nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)6.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)26mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.18nF

Technical details

100V 6.9A 5.5V 2.5W 26mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS

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