Infineon · FETs & Power MOSFETs · MPN IRF7473PBF
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| Gate Charge(Qg) | 61nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 6.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 26mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.18nF |
100V 6.9A 5.5V 2.5W 26mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS