Infineon IRF7452PBF

Infineon · FETs & Power MOSFETs · MPN IRF7452PBF

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Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)84pF
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)930pF

Technical details

100V 4.5A 5.5V 2.5W 60mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS

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