Infineon IRF7389TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7389TRPBF

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Specifications

Current - Continuous Drain(Id)5.9A
RDS(on)29mΩ@10V
Pd - Power Dissipation2.5W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)130pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)650pF
Gate Charge(Qg)22nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 30V 5.9A 2.5W Surface Mount SO-8

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