Infineon IRF7389PBF

Infineon · FETs & Power MOSFETs · MPN IRF7389PBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)22nC@10V
Current - Continuous Drain(Id)5.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.5W
RDS(on)29mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)130pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)650pF

Technical details

30V 5.9A 1V 2.5W 29mΩ@10V 1 N-Channel + 1 P-Channel SO-8 Single FETs, MOSFETs RoHS

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