Infineon IRF7379TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7379TRPBF

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Specifications

ConfigurationHalf-Bridge
Gate Charge(Qg)25nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)-
Number-
Input Capacitance(Ciss)520pF

Technical details

30V 5.8A 1V 2.5W SOIC-8 Single FETs, MOSFETs

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