Infineon IRF7343TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7343TRPBF

No reviews yet — be the first to review Infineon IRF7343TRPBF.

Specifications

Current - Continuous Drain(Id)4.7A
RDS(on)50mΩ@10V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage55V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)210pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)740pF
Gate Charge(Qg)36nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)190pF

Technical details

N-Channel+P-Channel Array 55V 4.7A 2W Surface Mount SO-8

Related FETs & Power MOSFETs