Infineon IRF7342TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7342TRPBF

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Specifications

Current - Continuous Drain(Id)3.4A
Pd - Power Dissipation2W
RDS(on)95mΩ@10V;150mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage55V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)86pF
Number2 P-Channel
Input Capacitance(Ciss)690pF
Gate Charge(Qg)26nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)210pF

Technical details

P-Channel 55V 3.4A 2W Surface Mount SO-8

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