Infineon IRF7341TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7341TRPBF

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Specifications

Current - Continuous Drain(Id)4.7A
Pd - Power Dissipation2W
RDS(on)50mΩ@10V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage55V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)71pF
Number2 N-Channel
Input Capacitance(Ciss)740pF
Gate Charge(Qg)36nC
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 55V 4.7A 2W Surface Mount SO-8

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