Infineon · FETs & Power MOSFETs · MPN IRF7341GTRPBF
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| Current - Continuous Drain(Id) | 5.1A |
|---|---|
| RDS(on) | 65mΩ@4.5V |
| Pd - Power Dissipation | 2.4W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 55V |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 780pF |
| Gate Charge(Qg) | 44nC |
| Operating Temperature | -55℃~+175℃ |
N-Channel Array 55V 5.1A 2.4W Surface Mount SO-8