Infineon IRF7341GTRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7341GTRPBF

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Specifications

Current - Continuous Drain(Id)5.1A
RDS(on)65mΩ@4.5V
Pd - Power Dissipation2.4W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage55V
Reverse Transfer Capacitance (Crss@Vds)66pF
Number2 N-Channel
Input Capacitance(Ciss)780pF
Gate Charge(Qg)44nC
Operating Temperature-55℃~+175℃

Technical details

N-Channel Array 55V 5.1A 2.4W Surface Mount SO-8

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