Infineon IRF7317TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7317TRPBF

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Specifications

Gate Charge(Qg)29nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)58mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)900pF

Technical details

N-Channel+P-Channel Array 20V 5.3A 2W Surface Mount SO-8

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