Infineon IRF7314PBF

Infineon · FETs & Power MOSFETs · MPN IRF7314PBF

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)29nC
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)58mΩ@4.5V
Number2 P-Channel
Input Capacitance(Ciss)780pF
TypeP-Channel

Technical details

20V 5.3A 700mV 2W 58mΩ@4.5V 2 P-Channel P-Channel SO-8 Single FETs, MOSFETs RoHS

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