Infineon IRF7311PBF

Infineon · FETs & Power MOSFETs · MPN IRF7311PBF

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)27nC@10V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)6.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)29mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)900pF
TypeN-Channel

Technical details

20V 6.6A 700mV 2W 29mΩ@4.5V 2 N-Channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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