Infineon IRF730PBF

Infineon · FETs & Power MOSFETs · MPN IRF730PBF

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)64pF
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

N-Channel 400V 5.5A 74W Through Hole TO-220AB

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