Infineon IRF7309TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7309TRPBF

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Specifications

Current - Continuous Drain(Id)4A
RDS(on)100mΩ@10V
Pd - Power Dissipation1.4W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)93pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)520pF
Gate Charge(Qg)25nC
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)200pF

Technical details

N-Channel+P-Channel Array 30V 4A 1.4W Surface Mount SO-8

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