Infineon IRF7309PBF

Infineon · FETs & Power MOSFETs · MPN IRF7309PBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)25nC@10V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)93pF
RDS(on)80mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)520pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 4A 1.4W Surface Mount SO-8

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