Infineon IRF7105TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF7105TRPBF

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Specifications

Current - Continuous Drain(Id)3.5A;2.3A
RDS(on)100mΩ@10V;250mΩ@4.5V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage25V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)61pF;67pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)330pF;290pF
Gate Charge(Qg)27nC@10V;25nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)250pF;210pF

Technical details

N-Channel+P-Channel 25V 3.5A 2W Surface Mount SO-8

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