Infineon IRF7101PBF

Infineon · FETs & Power MOSFETs · MPN IRF7101PBF

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
RDS(on)150mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)320pF
TypeN-Channel

Technical details

20V 3.5A 3V 2W 150mΩ@10V 2 N-Channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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