Infineon IRF6893MTRPBF

Infineon · FETs & Power MOSFETs · MPN IRF6893MTRPBF

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Specifications

Gate Charge(Qg)25nC@13V
Configuration-
Drain to Source Voltage25V
Current - Continuous Drain(Id)29A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.48nF

Technical details

25V 29A 1.6V 69W 1.2mΩ@10V 1 N-channel MG-WDSON-5 Single FETs, MOSFETs RoHS

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